US 12,094,730 B2
Asymmetrical sealing and gas flow control device
June Hee Lee, Hwaseong-Si (KR); Young Jong Yoon, Hwaseong-Si (KR); Seok Heon Yu, Hwaseong-Si (KR); Pill Kyu Jin, Hwaseong-Si (KR); and Jeong Woo Woo, Hwaseong-Si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Dec. 13, 2021, as Appl. No. 17/644,028.
Application 17/644,028 is a continuation of application No. 16/053,203, filed on Aug. 2, 2018, granted, now 11,276,585.
Claims priority of application No. 10-2018-0011597 (KR), filed on Jan. 30, 2018.
Prior Publication US 2022/0102168 A1, Mar. 31, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/67 (2006.01); C23C 16/44 (2006.01); C23C 16/455 (2006.01); F16K 1/34 (2006.01); H01L 21/687 (2006.01); C23C 16/458 (2006.01); H01J 37/32 (2006.01)
CPC H01L 21/67017 (2013.01) [C23C 16/4412 (2013.01); C23C 16/45591 (2013.01); F16K 1/34 (2013.01); H01L 21/6719 (2013.01); H01L 21/68735 (2013.01); C23C 16/45565 (2013.01); C23C 16/4585 (2013.01); H01J 37/32449 (2013.01); H01J 37/32513 (2013.01); H01J 37/32834 (2013.01); H01L 21/68742 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A substrate processing method, comprising:
spraying a process gas into a reaction region between a gas distribution plate and a substrate;
processing the substrate with the process gas;
discharging the process gas from the reaction region into an exhaust passage through a ring-shaped gap between the gas distribution plate and an upper seal, the ring-shaped gap having a first width and a second width; and
discharging the process gas from the exhaust passage into an outside through an exhaust port,
wherein a distance between the first width and the exhaust port is less than a distance between the second width and the exhaust port,
wherein the first width has an inner width and an outer width smaller than the inner width, and
wherein the second width has an outer width and an inner width smaller than the outer width.