US 12,094,711 B2
Tin oxide films in semiconductor device manufacturing
Jengyi Yu, San Ramon, CA (US); Samantha S. H. Tan, Newark, CA (US); Yu Jiang, Sunnyvale, CA (US); Hui-Jung Wu, Pleasanton, CA (US); Richard Wise, Los Gatos, CA (US); Yang Pan, Los Altos, CA (US); Nader Shamma, Cupertino, CA (US); and Boris Volosskiy, San Jose, CA (US)
Assigned to Lam Research Corporation, Fremont, CA (US)
Filed by Lam Research Corporation, Fremont, CA (US)
Filed on Feb. 10, 2022, as Appl. No. 17/650,551.
Application 17/650,551 is a division of application No. 16/687,142, filed on Nov. 18, 2019, granted, now 11,322,351.
Application 16/687,142 is a continuation of application No. 15/894,635, filed on Feb. 12, 2018, granted, now 10,546,748, issued on Jan. 28, 2020.
Claims priority of provisional application 62/479,709, filed on Mar. 31, 2017.
Claims priority of provisional application 62/460,573, filed on Feb. 17, 2017.
Prior Publication US 2022/0165571 A1, May 26, 2022
Int. Cl. H01L 21/311 (2006.01); H01L 21/02 (2006.01); H01L 21/027 (2006.01); H01L 21/033 (2006.01); H01L 21/3065 (2006.01); H01L 21/3213 (2006.01); H01L 21/465 (2006.01); H01L 21/467 (2006.01); H01L 21/67 (2006.01); H01J 37/32 (2006.01); H01L 21/68 (2006.01); H01L 21/683 (2006.01)
CPC H01L 21/0332 (2013.01) [H01L 21/02175 (2013.01); H01L 21/02565 (2013.01); H01L 21/0262 (2013.01); H01L 21/0274 (2013.01); H01L 21/0337 (2013.01); H01L 21/3065 (2013.01); H01L 21/31116 (2013.01); H01L 21/31122 (2013.01); H01L 21/31138 (2013.01); H01L 21/31144 (2013.01); H01L 21/32136 (2013.01); H01L 21/32137 (2013.01); H01L 21/32139 (2013.01); H01L 21/465 (2013.01); H01L 21/467 (2013.01); H01L 21/67069 (2013.01); H01L 21/67167 (2013.01); H01L 21/67207 (2013.01); H01J 37/3211 (2013.01); H01J 37/32651 (2013.01); H01J 2237/186 (2013.01); H01J 2237/3321 (2013.01); H01J 2237/334 (2013.01); H01L 21/02205 (2013.01); H01L 21/02274 (2013.01); H01L 21/0228 (2013.01); H01L 21/68 (2013.01); H01L 21/6833 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A system for processing a semiconductor substrate, the system comprising:
(a) one or more deposition chambers;
(b) one or more etch chambers;
(c) a plasma generator and
(d) a controller comprising program instructions configured to cause:
(i) a deposition of a tin oxide layer on the semiconductor substrate, wherein the deposition comprises exposing the semiconductor substrate to a tin-containing precursor and an oxygen-containing precursor; and
(ii) a contact of the semiconductor substrate with a plasma formed in a process gas comprising H2 and a hydrocarbon, such that a carbon-containing polymer is formed on the semiconductor substrate, wherein a ratio of H2 to hydrocarbon in the process gas is at least 5, thereby causing selective etching of the tin oxide layer in a presence of a material selected from the group consisting of silicon (Si), carbon (C), and a carbon-containing material with an etch selectivity of at least 10.