US 12,094,620 B2
Semiconductor device with epitaxial liftoff layers for directly converting radioisotope emissions into electrical power
Peter Cabauy, Miami, FL (US)
Assigned to City Labs, Inc., Miami, FL (US)
Filed by City Labs, Inc., Miami, FL (US)
Filed on Sep. 18, 2023, as Appl. No. 18/369,761.
Application 18/369,761 is a continuation of application No. 17/549,724, filed on Dec. 13, 2021, granted, now 11,783,956.
Application 17/549,724 is a continuation of application No. 16/835,219, filed on Mar. 30, 2020, granted, now 11,200,997.
Application 16/835,219 is a continuation in part of application No. 16/252,698, filed on Jan. 20, 2019, granted, now 10,607,744, issued on Mar. 31, 2020.
Application 16/252,698 is a continuation of application No. 15/790,713, filed on Oct. 23, 2017, granted, now 10,186,339, issued on Jan. 22, 2019.
Application 15/790,713 is a continuation in part of application No. 14/623,861, filed on Feb. 17, 2015, granted, now 9,799,419, issued on Oct. 24, 2017.
Claims priority of provisional application 61/940,571, filed on Feb. 17, 2014.
Prior Publication US 2024/0087767 A1, Mar. 14, 2024
Int. Cl. H01L 31/02 (2006.01); G21H 1/06 (2006.01); H01L 31/0216 (2014.01); H01L 31/0232 (2014.01); H01L 31/0304 (2006.01); H01L 31/115 (2006.01); H01L 31/18 (2006.01)
CPC G21H 1/06 (2013.01) [H01L 31/02161 (2013.01); H01L 31/02327 (2013.01); H01L 31/0304 (2013.01); H01L 31/03046 (2013.01); H01L 31/115 (2013.01); H01L 31/184 (2013.01); H01L 31/1844 (2013.01); H01L 31/1892 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A device for producing electricity, comprising:
a stack of material layers, further comprising:
a back side metal layer;
epitaxial layers overlying the back side metal layer, the epitaxial layers comprising:
an n-doped layer above a p-doped layer;
one or more first conductive layers disposed between the p-doped layer and the back side metal layer;
one or more second conductive layers disposed above the n-doped layer;
a radioisotope source, disposed above or in contact with an uppermost layer of the one or more second conductive layers, for generating particles or gamma rays that impinge the epitaxial layers;
a first conductive region in conductive contact with the radioisotope source;
a second conductive region in conductive contact with the back side metal layer; and
wherein electricity is produced between the first and second conductive regions by action of the particles or the gamma rays.