US 12,094,568 B2
Content addressable memory for large search words
Hang-Ting Lue, Hsinchu (TW)
Assigned to MACRONIX INTERNATIONAL CO., LTD., Hsinchu (TW)
Filed by MACRONIX INTERNATIONAL CO., LTD., Hsinchu (TW)
Filed on Jul. 18, 2022, as Appl. No. 17/866,958.
Prior Publication US 2024/0021224 A1, Jan. 18, 2024
Int. Cl. G11C 7/10 (2006.01); G11C 7/12 (2006.01); G11C 8/08 (2006.01); G11C 15/04 (2006.01)
CPC G11C 7/1096 (2013.01) [G11C 7/1069 (2013.01); G11C 7/12 (2013.01); G11C 8/08 (2013.01); G11C 15/04 (2013.01)] 22 Claims
OG exemplary drawing
 
1. A memory, comprising:
a memory array arranged to hold stored words in respective sets of TCAM cells, each TCAM cell configured to store ternary states of a bit of a stored word;
a circuit to select a set of TCAM cells in the sets of TCAM cells;
a circuit to apply an input search word to TCAM cells in the selected set of TCAM cells; and
a circuit to generate an output indicating similarity of a stored word in the selected set of TCAM cells to the input search word,
wherein the output generated by the circuit to generate the output includes a signal indicating similarity when a number of mismatches of bits in the stored word in the selected set of TCAM cells to the input search word is below a threshold, the threshold being greater than one.