US 12,094,519 B2
Data read/write method, device, and memory having the same
Shengcheng Deng, Hefei (CN)
Assigned to Changxin Memory Technologies, Inc., Hefei (CN)
Filed by Changxin Memory Technologies, Inc., Anhui (CN)
Filed on Apr. 5, 2021, as Appl. No. 17/222,641.
Application 17/222,641 is a continuation of application No. PCT/CN2019/118878, filed on Nov. 15, 2019.
Claims priority of application No. 201811446001.3 (CN), filed on Nov. 29, 2018.
Prior Publication US 2021/0264962 A1, Aug. 26, 2021
Int. Cl. G11C 11/409 (2006.01); G06F 12/06 (2006.01)
CPC G11C 11/409 (2013.01) [G06F 12/06 (2013.01); G06F 2212/70 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A data read/write method for a dynamic random-access memory (DRAM), comprising:
entering a page read/write mode configured by a reserved bit in a mode register of the DRAM;
receiving a page read/write command including a page read/write enable command configured by a reserved bit in a read/write command of the DRAM; and
performing a page read/write operation according to the page read/write command, wherein the page read/write command further comprises a page read/write length command, the page read/write length command indicates a read/write length of each page read/write operation and is configured by a burst length bit in the read/write command of the DRAM, and
wherein the DRAM includes a Low-Power Double Data Rate 4 (LP-DDR4) synchronous DRAM (SDRAM), the reserved bit in the mode register includes a reserved bit in an MR1 mode register to configure a burst mode, the burst length bit includes a command bit corresponding to a CA5 pin, and the reserved bit in the read/write command includes a reserved command bit corresponding to a CA3 pin.