US 12,094,517 B2
Word line pump device of dynamic random access memory chip and clamp circuit thereof
Ting-Shuo Hsu, New Taipei (TW)
Assigned to NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed by NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed on Nov. 28, 2022, as Appl. No. 17/994,397.
Prior Publication US 2024/0177763 A1, May 30, 2024
Int. Cl. G11C 11/4074 (2006.01); G11C 11/408 (2006.01)
CPC G11C 11/4074 (2013.01) [G11C 11/4085 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A word line pump device of a dynamic random access memory chip, adapted to provide a word line voltage to a word line of the dynamic random access memory chip, wherein the dynamic random access memory chip receives a first voltage and a second voltage from outside, the first voltage is smaller than the second voltage, and the word line pump device comprises:
a power detecting circuit, detecting whether the word line pump device receives a power supply voltage and outputting a power-on indication signal correspondingly;
a clamp circuit, coupled to the power detecting circuit and clamping the word line voltage to the second voltage according to the power-on indication signal in response to the word line pump device not receiving the power supply voltage;
an oscillator circuit, coupled to the power detecting circuit and providing a clock signal according to the power-on indication signal in response to the word line pump device receiving the power supply voltage; and
a pump circuit, coupled to the oscillator circuit and boosting the word line voltage to a target word line driving voltage according to the clock signal.