US 12,094,138 B2
Semiconductor inspection device and semiconductor inspection method
Tomochika Takeshima, Hamamatsu (JP); Takafumi Higuchi, Hamamatsu (JP); and Kazuhiro Hotta, Hamamatsu (JP)
Assigned to HAMAMATSU PHOTONICS K.K., Hamamatsu (JP)
Appl. No. 17/608,833
Filed by HAMAMATSU PHOTONICS K.K., Hamamatsu (JP)
PCT Filed Apr. 16, 2020, PCT No. PCT/JP2020/016739
§ 371(c)(1), (2) Date Nov. 4, 2021,
PCT Pub. No. WO2020/246149, PCT Pub. Date Dec. 10, 2020.
Claims priority of application No. 2019-103830 (JP), filed on Jun. 3, 2019.
Prior Publication US 2022/0301197 A1, Sep. 22, 2022
Int. Cl. G06T 7/30 (2017.01); G06T 11/00 (2006.01); G06F 30/392 (2020.01)
CPC G06T 7/30 (2017.01) [G06T 11/00 (2013.01); G06F 30/392 (2020.01); G06T 2207/20081 (2013.01); G06T 2207/30148 (2013.01); G06T 2210/32 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A semiconductor inspection device comprising:
a photodetector configured to detect light from a semiconductor device and output a detection signal;
an optical system configured to guide the light to the photodetector; and
a circuitry,
wherein the circuitry is configured to
generate a first optical image which is an optical image of the semiconductor device based on the detection signal;
receive an input of a first CAD image;
learn a conversion process of the first CAD image by machine learning using the optical image as training data, and convert the first CAD image into a second CAD image resembling the optical image by the conversion process based on a result of the learning, and
perform alignment based on the optical image and the second CAD image,
wherein the circuitry performs conversion into the second CAD image by extracting a specific pattern from the first CAD image by the conversion process.