US 12,093,812 B2
Ultralow power inference engine with external magnetic field programming assistance
Michael Grobis, Campbell, CA (US); and Michael Nicolas Albert Tran, San Jose, CA (US)
Assigned to SanDisk Technologies LLC, Addison, TX (US)
Filed by SanDisk Technologies LLC, Addison, TX (US)
Filed on Oct. 2, 2020, as Appl. No. 17/061,798.
Prior Publication US 2022/0108158 A1, Apr. 7, 2022
Int. Cl. G11C 11/15 (2006.01); G06F 17/16 (2006.01); G06N 3/065 (2023.01); G06N 3/08 (2023.01); H03M 1/12 (2006.01); H03M 1/66 (2006.01)
CPC G06N 3/065 (2023.01) [G06F 17/16 (2013.01); G06N 3/08 (2013.01); G11C 11/15 (2013.01); H03M 1/1205 (2013.01); H03M 1/662 (2013.01)] 19 Claims
OG exemplary drawing
 
1. An apparatus, comprising:
a control circuit configured to connect to an array including a plurality of magnetoresistive random access memory (MRAM) memory cells connected along one or more bit lines, the control circuit is configured to:
selectively bias individual ones of the MRAM memory cells to be programmed in response to an applied external magnetic field having a field strength above a first level and below a second level; and
concurrently sense a first plurality of the MRAM memory cells connected along a shared bit line in response to a corresponding first plurality of input voltages applied to the first plurality of the MRAM memory cells,
the control circuit comprising an analog to digital converter configured to receive a value of a current in the shared bit line in response to the corresponding first plurality of input voltages applied to the first plurality of the MRAM memory cells and determine a multi-bit output value from the current.