US 12,093,532 B2
Data reading method, memory storage device, and memory control circuit unit
Chih-Hsiang Lee, Hsinchu County (TW)
Assigned to PHISON ELECTRONICS CORP., Miaoli (TW)
Filed by PHISON ELECTRONICS CORP., Miaoli (TW)
Filed on Nov. 25, 2022, as Appl. No. 17/994,013.
Claims priority of application No. 111141454 (TW), filed on Oct. 31, 2022.
Prior Publication US 2024/0143182 A1, May 2, 2024
Int. Cl. G06F 3/06 (2006.01); G06F 12/02 (2006.01)
CPC G06F 3/0613 (2013.01) [G06F 3/0659 (2013.01); G06F 3/0679 (2013.01); G06F 12/0246 (2013.01)] 30 Claims
OG exemplary drawing
 
1. A data reading method for a rewritable non-volatile memory module, wherein the rewritable non-volatile memory module comprises a plurality of chip enable regions, a first chip enable region among the chip enable regions comprises a plurality of planes, and the planes comprise a first plane and a second plane, the data reading method comprising:
receiving a plurality of read commands from a host system, wherein the read commands are at least used to instruct to read first data stored in the first plane and second data stored in the second plane;
sending a plurality of read command sequences to the rewritable non-volatile memory module according to the read commands, wherein the read command sequences are at least used to instruct to execute a first read operation on the first plane to obtain the first data and to execute a second read operation on the second plane to obtain the second data;
performing a performance comparison on the first read operation and the second read operation to obtain a comparison result;
sorting, according to the comparison result, a first direct memory access command sequence corresponding to the first read operation and a second direct memory access command sequence corresponding to the second read operation to obtain a sorting result, wherein both of the first direct memory access command sequence and the second direct memory access command sequence are configured to read data stored in a buffer area of the rewritable non-volatile memory module through a specific channel after the first read operation on the first plane and the second read operation on the second plane are performed in parallel; and
sequentially sending, based on the sorting result, the first direct memory access command sequence and the second direct memory access command sequence to the rewritable non-volatile memory module to read the first data and the second data from the buffer area of the rewritable non-volatile memory module.