US 12,093,185 B2
Storage device including nonvolatile memory device and operating method thereof
Heechul Chae, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on May 30, 2022, as Appl. No. 17/827,850.
Application 17/827,850 is a continuation of application No. 16/533,901, filed on Aug. 7, 2019, granted, now 11,347,654.
Claims priority of application No. 10-2018-0141638 (KR), filed on Nov. 16, 2018.
Prior Publication US 2022/0292030 A1, Sep. 15, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. G06F 12/1009 (2016.01); G06F 3/06 (2006.01); G06F 9/54 (2006.01); G06F 12/02 (2006.01)
CPC G06F 12/1009 (2013.01) [G06F 3/0607 (2013.01); G06F 3/0652 (2013.01); G06F 3/0658 (2013.01); G06F 3/0659 (2013.01); G06F 9/544 (2013.01); G06F 12/0246 (2013.01); G06F 3/0679 (2013.01)] 19 Claims
OG exemplary drawing
 
1. An operating method of a storage device, wherein the storage device includes a memory controller and a nonvolatile memory device, the nonvolatile memory device including a memory having a plurality of pages in order of physical page number, the plurality of pages including a first page, a second page, and a third page, the memory controller includes a write check manager, the method comprising:
writing, by the memory controller, a first data received from an external host at the first page of the nonvolatile memory device;
writing, by the memory controller, a second data received from the external host and a first check data at the second page of the nonvolatile memory device;
writing, by the memory controller, a third data received from the external host and a second check data at the third page of the nonvolatile memory device; and
skipping, by the memory controller, reading the first check data after reading the second check data for a recovery operation,
wherein each of the first check data and second check data includes sequence data, offset data, and an address.