US 12,093,108 B2
Method of controlling memory and electronic device performing the method
Myungkee Lee, Gyeonggi-do (KR); and Chiwoong Byun, Gyeonggi-do (KR)
Assigned to Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed on Feb. 15, 2023, as Appl. No. 18/110,072.
Application 18/110,072 is a continuation of application No. PCT/KR2022/012869, filed on Aug. 29, 2022.
Claims priority of application No. 10-2021-0135108 (KR), filed on Oct. 12, 2021.
Prior Publication US 2023/0195195 A1, Jun. 22, 2023
Int. Cl. G06F 1/32 (2019.01); G06F 1/3225 (2019.01); G06F 1/3234 (2019.01)
CPC G06F 1/3225 (2013.01) [G06F 1/3275 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A memory control method comprising:
measuring an internal temperature of a processor by a thermal manage unit;
predicting a leakage current of a first memory based on the internal temperature and a voltage applied to the first memory;
comparing a first power consumption when the processor accesses a second memory with a second power consumption due to the leakage current; and
controlling the first memory based on the comparison,
wherein the processor accesses the second memory after accessing the first memory.