US 12,092,961 B2
Semiconductor device manufacturing method and extreme ultraviolet mask manufacturing method
Sang Chul Yeo, Osan-si (KR); and Dongwon Kang, Seoul (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Nov. 30, 2021, as Appl. No. 17/537,700.
Claims priority of application No. 10-2021-0046091 (KR), filed on Apr. 8, 2021.
Prior Publication US 2022/0326622 A1, Oct. 13, 2022
Int. Cl. G03F 7/00 (2006.01); G03F 1/24 (2012.01); G06F 30/30 (2020.01)
CPC G03F 7/70441 (2013.01) [G03F 1/24 (2013.01); G03F 7/70033 (2013.01); G06F 30/30 (2020.01)] 20 Claims
OG exemplary drawing
 
1. A manufacturing method comprising:
generating a first EUV mask image by applying thin mask approximation to a pattern on an EUV mask;
determining whether an angle of an edge pair constituted by two edges facing each other of edges of the pattern on the EUV mask is equal to or less than an angle tolerance;
performing, in response to the angle of the edge pair being equal to or less than the angle tolerance, a process that includes:
applying a coupling filter to a coupling edge;
generating a second EUV mask image by applying an edge filter to each of the edges;
generating a final EUV mask image by adding the first EUV mask image to the second EUV mask image; and
generating an optical proximity correction (OPC) model based on the final EUV mask image, and obtaining EUV mask design data by performing a simulation using the OPC model; and
manufacturing at least one of an EUV mask and a semiconductor device based on the EUV mask design data.