US 12,092,960 B2
Mask topology optimization method and system for surface plasmon near-field photolithography
Xiangang Luo, Sichuan (CN); Mingfeng Xu, Sichuan (CN); Mingbo Pu, Sichuan (CN); Di Sang, Sichuan (CN); Xiaoliang Ma, Sichuan (CN); Xiong Li, Sichuan (CN); Ping Gao, Sichuan (CN); and Zeyu Zhao, Sichuan (CN)
Assigned to THE INSTITUTE OF OPTICS AND ELECTRONICS, THE CHINESE ACADEMY OF SCIENCES, Sichuan (CN)
Appl. No. 18/575,532
Filed by THE INSTITUTE OF OPTICS AND ELECTRONICS, THE CHINESE ACADEMY OF SCIENCES, Sichuan (CN)
PCT Filed Oct. 14, 2021, PCT No. PCT/CN2021/123793
§ 371(c)(1), (2) Date Dec. 29, 2023,
PCT Pub. No. WO2023/060505, PCT Pub. Date Apr. 20, 2023.
Prior Publication US 2024/0264535 A1, Aug. 8, 2024
Int. Cl. G03F 7/00 (2006.01); G03F 1/36 (2012.01)
CPC G03F 7/70433 (2013.01) [G03F 1/36 (2013.01); G03F 7/705 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A mask topology optimization method for surface plasmon near-field photolithography, comprising steps of:
acquiring a first mask data and performing fuzzy processing and projection processing on the same to obtain a second mask data;
performing forward calculation according to the second mask data and a preset surface plasmon near-field photolithography condition to obtain an imaging data and a forward field data;
calculating an imaging error between the imaging data and an expected imaging data;
performing adjoint calculation on the second mask data to obtain an adjoint field data;
calculating a gradient matrix of the imaging error relative to the first mask data according to the forward field data and the adjoint field data; and
updating the first mask data according to the gradient matrix, repeating the above steps for iteration calculation until the optimized mask data is obtained, and outputting a final mask pattern.