US 12,092,959 B1
Interferometric lithography grating-mask-based wafer-scale large-area nanopatterning
Steven R. J. Brueck, Albuquerque, NM (US); Alexander Neumann, Albuquerque, NM (US); and Vineeth Sasidharan, Albuquerque, NM (US)
Assigned to UNM RAINFOREST INNOVATIONS, Albuquerque, NM (US)
Filed by UNM RAINFOREST INNOVATIONS, Albuquerque, NM (US)
Filed on Feb. 4, 2022, as Appl. No. 17/592,659.
Claims priority of provisional application 63/146,067, filed on Feb. 5, 2021.
Int. Cl. G03F 7/00 (2006.01); G02B 27/10 (2006.01); G02B 27/14 (2006.01)
CPC G03F 7/70408 (2013.01) [G02B 27/1086 (2013.01); G02B 27/144 (2013.01); G03F 7/7055 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A method for large-area, full-wafer nanopatterning comprising:
directing a laser beam from a laser light source to one or more beam conditioning and translation optics to expand the laser beam to illuminate an area of a full wafer;
splitting the laser beam from the one or more beam conditioning and translation optics by a grating beam splitter;
directing at least two beams from the grating beam splitter through recombination optics to provide a standing wave intensity fringe pattern at a photoresist-coated full-wafer target; and
keeping the wafer stationary while exposing the photoresist-coated full-wafer,
wherein the beam conditioning optics comprise one or more optical components and one or more actuator components that shift the position of the at least two laser beams on the photoresist-coated full-wafer target without changing the position of the fringes of the standing wave intensity fringe pattern on the wafer during an exposure to improve the uniformity of the exposure.