US 12,092,861 B2
Photonic semiconductor device and method of manufacture
Chen-Hua Yu, Hsinchu (TW); and Hsing-Kuo Hsia, Jhubei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jul. 15, 2020, as Appl. No. 16/929,799.
Claims priority of provisional application 62/906,978, filed on Sep. 27, 2019.
Prior Publication US 2021/0096311 A1, Apr. 1, 2021
Int. Cl. G02B 6/12 (2006.01); G02B 6/30 (2006.01); G02B 6/42 (2006.01); H04B 10/80 (2013.01); H04Q 11/00 (2006.01)
CPC G02B 6/12004 (2013.01) [G02B 6/30 (2013.01); G02B 6/4206 (2013.01); G02B 6/4214 (2013.01); G02B 6/4274 (2013.01); G02B 6/428 (2013.01); H04B 10/801 (2013.01); H04B 10/807 (2013.01); H04Q 11/0005 (2013.01); H04Q 2011/0035 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device, comprising:
a photonic routing structure comprising a silicon waveguide, a plurality of photonic devices, and a grating coupler, wherein the silicon waveguide is optically coupled to the plurality of photonic devices and to the grating coupler;
an interconnect structure over the photonic routing structure, wherein the interconnect structure comprises a plurality of conductive lines within a plurality of dielectric layers, wherein the grating coupler is configured to transmit optical signals vertically through the plurality of dielectric layers to an external optical fiber disposed over the interconnect structure;
a plurality of computing sites on the interconnect structure, wherein each computing site comprises an electronic die bonded to the interconnect structure, wherein each electronic die of the plurality of computing sites is electrically connected to a corresponding photonic device of the plurality of photonic devices; and
a dielectric material extending on a top surface of the interconnect structure and extending on a sidewall of each electronic die, wherein a thickness of the dielectric material is the same as a thickness of each electronic die.