US 12,092,664 B2
Layout for integrated resistor with current sense functionality
Ryan Desrosiers, Fort Collins, CO (US); Jay Ackerman, Loveland, CO (US); and Mark Rutherford, Wellington, CO (US)
Assigned to Avago Technologies International Sales Pte. Limited, Singapore (SG)
Filed by Avago Technologies International Sales Pte. Limited, Singapore (SG)
Filed on Jun. 30, 2022, as Appl. No. 17/855,073.
Prior Publication US 2024/0003943 A1, Jan. 4, 2024
Int. Cl. G01R 19/00 (2006.01)
CPC G01R 19/0092 (2013.01) 20 Claims
OG exemplary drawing
 
1. An integrated circuit comprising:
a first circuit including a first amplifier, a first resistor, a second resistor, a third resistor, a fourth resistor, and a fifth resistor; wherein the first resistor has a first resistance (Rs); wherein the second resistor and the third resistor each have a second resistance (Rt); wherein the fourth resistor and the fifth resistor each have a third resistance (Rb); wherein the first resistor is configured to carry a first current (Isns) which is based on the first resistance (Rs) and a voltage differential between a first voltage (Vrect) and a second voltage (Vmid); wherein the first amplifier is configured to output a third voltage (Vo) based of the first current (Isns); wherein a gain of the first amplifier is based on the second resistance (Rt) and the third resistance (Rb);
wherein the first resistor is formed of a first plurality of polysilicon sheets; wherein the second resistor is formed of a second plurality of polysilicon sheets; wherein the third resistor is formed of a third plurality of polysilicon sheets; wherein the first plurality of polysilicon sheets, the second plurality of polysilicon sheets, and the third plurality of polysilicon sheets are disposed on a layer of the integrated circuit; wherein the second plurality of polysilicon sheets are arranged symmetrically to the third plurality of polysilicon sheets about an axis to reduce a stress differential between the second plurality of polysilicon sheets and the third plurality of polysilicon sheets.