US 12,092,579 B2
Integrated sensor with reduced skew
Eric A. G. Webster, Santa Clara, CA (US); Dajiang Yang, San Jose, CA (US); Xin Wang, San Jose, CA (US); Zhaoyu He, Milpitas, CA (US); Changhoon Choi, Palo Alto, CA (US); Peter J. Lim, Saratoga, CA (US); and Todd Rearick, Cheshire, CT (US)
Assigned to Quantum-Si Incorporated, Branford, CT (US)
Filed by Quantum-Si Incorporated, Branford, CT (US)
Filed on Jan. 4, 2023, as Appl. No. 18/093,213.
Application 18/093,213 is a continuation of application No. 17/224,899, filed on Apr. 7, 2021, granted, now 11,573,180, issued on Feb. 7, 2023.
Claims priority of provisional application 63/007,035, filed on Apr. 8, 2020.
Prior Publication US 2023/0152229 A1, May 18, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G01N 21/64 (2006.01); G05F 1/46 (2006.01); H01L 27/146 (2006.01)
CPC G01N 21/6456 (2013.01) [G01N 21/6408 (2013.01); G01N 21/6454 (2013.01); G05F 1/46 (2013.01); H01L 27/14603 (2013.01); H01L 27/14614 (2013.01); H01L 27/14616 (2013.01); H01L 27/14636 (2013.01); H01L 27/14643 (2013.01); G01N 2021/6439 (2013.01)] 21 Claims
OG exemplary drawing
 
1. An integrated circuit, comprising:
a first charge storage region;
a first transfer gate configured to control, in response to a control signal, a transfer of charge carriers to the first charge storage region,
wherein:
the first transfer gate is configured to receive, at a first time, the control signal; and
the control signal has, at the first transfer gate at the first time, a first voltage;
a second charge storage region; and
a second transfer gate configured to control, in response to the control signal, a transfer of charge carriers to the second charge storage region,
wherein:
the second transfer gate is configured to receive, substantially at the first time, the control signal; and
the control signal has, at the second transfer gate substantially at the first time, a second voltage different from the first voltage.