	US 12,091,743 B2
	Sputtering target, manufacturing method therefor, and manufacturing method for magnetic recording medium
Yasuyuki Iwabuchi, Ibaraki (JP)
Assigned to JX Advanced Metals Corporation, Tokyo (JP)
Appl. No. 18/016,812
Filed by JX Nippon Mining & Metals Corporation, Tokyo (JP)
PCT Filed Jul. 28, 2021, PCT No. PCT/JP2021/027940 § 371(c)(1), (2) Date Jan. 18, 2023, PCT Pub. No. WO2022/049935, PCT Pub. Date Mar. 10, 2022.
Claims priority of application No. 2020-148519 (JP), filed on Sep. 3, 2020.
Prior Publication US 2023/0272521 A1, Aug. 31, 2023
Int. Cl. C23C 14/34 (2006.01); C04B 35/58 (2006.01); C04B 35/64 (2006.01); C23C 14/06 (2006.01); G11B 5/851 (2006.01); H01J 37/34 (2006.01)

CPC C23C 14/3414 (2013.01) [C04B 35/58014 (2013.01); C04B 35/58021 (2013.01); C04B 35/64 (2013.01); C23C 14/0652 (2013.01); G11B 5/851 (2013.01); H01J 37/3429 (2013.01); H01J 37/3491 (2013.01); C04B 2235/3206 (2013.01); C04B 2235/3826 (2013.01); C04B 2235/3856 (2013.01); C04B 2235/3873 (2013.01); C04B 2235/3886 (2013.01); C04B 2235/5436 (2013.01); C04B 2235/5445 (2013.01); C04B 2235/656 (2013.01); H01J 2237/332 (2013.01)]

13 Claims

1. A sputtering target, comprising Si₃N₄, SiC, MgO and TiCN, wherein a specific resistance of the sputtering target is 10 mΩ·cm or less and a diffraction peak representing the crystal phase of TiCN at the incident angle (2θ) of 41.8° to 42.8° shows the maximum intensity among diffraction peaks present at an incident angle (2θ) of 20° to 80° in X-ray diffraction.