US 12,091,519 B2
Barrier film
Sung Jin Shin, Daejeon (KR); Jang Yeon Hwang, Daejeon (KR); Hee Joon Jeong, Daejeon (KR); Bo Ra Park, Daejeon (KR); and Hee Wang Yang, Daejeon (KR)
Assigned to LG Chem, Ltd., Seoul (KR)
Appl. No. 17/286,562
Filed by LG CHEM, LTD., Seoul (KR)
PCT Filed Oct. 22, 2019, PCT No. PCT/KR2019/013861
§ 371(c)(1), (2) Date Apr. 19, 2021,
PCT Pub. No. WO2020/085749, PCT Pub. Date Apr. 30, 2020.
Claims priority of application No. 10-2018-0128798 (KR), filed on Oct. 26, 2018.
Prior Publication US 2021/0340345 A1, Nov. 4, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. C23C 18/12 (2006.01); C08J 7/04 (2020.01); C23C 18/14 (2006.01); H10K 50/844 (2023.01)
CPC C08J 7/0423 (2020.01) [C23C 18/122 (2013.01); C23C 18/1233 (2013.01); C23C 18/1295 (2013.01); C23C 18/143 (2019.05); C08J 2367/02 (2013.01); C08J 2433/16 (2013.01); H10K 50/844 (2023.02)] 10 Claims
OG exemplary drawing
 
1. A barrier film, comprising:
a base layer; and
an inorganic layer including a first region and a second region, which have different elemental contents (atomic %) of Si, N, and O from each other as measured by XPS, and having a compactness expressed through an etching rate of 0.17 nm/s or less in the thickness direction for an Ar ion etching condition to etch Ta2O5 at a rate of 0.09 nm/s,
wherein the second region has a higher elemental content of N than that of the first region, and the second region has a thickness of 10% or more relative to the total thickness of the inorganic layer, and
wherein the second region satisfies the relationship of Si content>N content>O content.