US 12,090,570 B2
Laser processing apparatus, laser processing method, and method for manufacturing semiconductor apparatus
Naoyuki Kobayashi, Yokohama (JP); Masashi Machida, Yokohama (JP); and Hiroaki Imamura, Yokohama (JP)
Assigned to JSW AKTINA SYSTEM CO., LTD, Yokohama (JP)
Filed by JSW AKTINA SYSTEM CO., LTD, Yokohama (JP)
Filed on Sep. 27, 2023, as Appl. No. 18/373,617.
Application 18/373,617 is a division of application No. 16/772,072, granted, now 11,813,694, previously published as PCT/JP2018/003564, filed on Feb. 2, 2018.
Prior Publication US 2024/0024980 A1, Jan. 25, 2024
Int. Cl. B23K 26/035 (2014.01); B23K 26/384 (2014.01); B23K 101/40 (2006.01)
CPC B23K 26/035 (2015.10) [B23K 26/384 (2015.10); B23K 2101/40 (2018.08)] 7 Claims
OG exemplary drawing
 
1. A method for manufacturing a semiconductor apparatus comprising the steps of:
(a) irradiating a semiconductor film with a first laser beam having first energy intensity; and
(b) after the step (a), irradiating the semiconductor film with a second laser beam having second energy intensity when a temperature of the semiconductor film falls within a range between 100° C. or higher and a freezing point or lower, the second energy intensity being smaller than the first energy intensity.