| CPC H10K 59/1213 (2023.02) [H10D 30/6734 (2025.01); H10D 30/6743 (2025.01); H10D 30/6755 (2025.01); H10D 30/6757 (2025.01)] | 22 Claims |
|
1. A transistor comprising:
an active layer comprising:
a first end area comprising a first area containing boron ions, and a second area not doped with boron ions;
a middle area adjacent to the first area, and spaced from the second area by the first area; and
a second end area spaced from the first end area by the middle area;
a first electrode on the active layer, overlapping the second area, not overlapping the first area, and connected to the first end area through a first contact hole;
an upper gate electrode on the active layer, overlapping the middle area, at a same layer as the first electrode, and to receive a gate signal; and
a lower gate electrode under the active layer, overlapping the first contact hole and the middle area, and to receive the gate signal.
|