| CPC H10H 20/857 (2025.01) [H01L 25/0753 (2013.01)] | 16 Claims |

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1. A semiconductor light emitting device comprising:
a body part comprising a first conductivity type semiconductor layer, an active layer on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer on the active layer;
an insulating part covering at least a side surface of the body part; and
an electrode part comprising a first conductivity type electrode in contact with the first conductivity type semiconductor layer, and a second conductivity type electrode in contact with the second conductivity type semiconductor layer,
wherein the second conductivity type electrode comprises:
a first portion on the second conductivity type semiconductor layer; and
a second portion extending from the first portion and covering at least a portion of the insulating part,
wherein the second portion protrudes more than the first conductivity type electrode with respect to the side surface of the body part,
wherein the first portion includes a transparent material, and
wherein the second portion includes a metal material.
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