US 12,419,147 B2
Light-emitting device
Chao-Hsing Chen, Hsinchu (TW); Meng-Hsiang Hong, Hsinchu (TW); Chi-Shiang Hsu, Hsinchu (TW); Yen-Liang Kuo, Hsinchu (TW); Chien-Ya Hung, Hsinchu (TW); Yong-Yang Chen, Hsinchu (TW); Yu-Ling Lin, Hsinchu (TW); and Xue-Cheng Yao, Hsinchu (TW)
Assigned to EPISTAR CORPORATION, Hsinchu (TW)
Filed by EPISTAR CORPORATION, Hsinchu (TW)
Filed on Dec. 28, 2022, as Appl. No. 18/089,727.
Claims priority of application No. 111100474 (TW), filed on Jan. 5, 2022.
Prior Publication US 2023/0215998 A1, Jul. 6, 2023
Int. Cl. H01L 33/60 (2010.01); H10H 20/819 (2025.01); H10H 20/831 (2025.01); H10H 20/832 (2025.01); H10H 20/84 (2025.01); H10H 20/856 (2025.01); H10H 20/825 (2025.01)
CPC H10H 20/856 (2025.01) [H10H 20/819 (2025.01); H10H 20/831 (2025.01); H10H 20/835 (2025.01); H10H 20/84 (2025.01); H10H 20/825 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A light-emitting device, comprising:
a semiconductor stack, comprising:
a first semiconductor layer comprising a first part and a second part connected to the first part; and
a semiconductor mesa comprising an active region formed on the first part and a second semiconductor layer formed on the active region;
a first insulative layer formed on the semiconductor stack and comprising a plurality of first openings, wherein the plurality of first openings comprises a first group and a second group;
a reflective conductive structure formed on the first insulative layer and electrically connected to the second semiconductor layer through the first group of the plurality of first openings;
a second insulative layer formed on the reflective conductive structure and comprising a plurality of second openings and a contact area, wherein the plurality of second openings comprises a first group and a second group, and wherein the contact area comprises one or multiple covering portions and the first group of the plurality of second openings, the one or multiple covering portions are overlapped with the first group of the plurality of first openings, and the first group of the plurality of second openings and the first group of the plurality of first openings are arranged in a staggered manner;
a first pad formed on the second insulative layer and electrically connected to the first semiconductor layer through the second group of the plurality of first openings and the second group of the plurality of second openings; and
a second pad formed on the second insulative layer and electrically connected to the second semiconductor layer through the first group of the plurality of first openings and the first group of the plurality of second openings.