	US 12,419,136 B2
	Ultrathin silicon oxynitride interface material, tunnel oxide passivated structure and preparation methods and applications thereof
Jichun Ye, Ningbo (CN); Yuheng Zeng, Ningbo (CN); Haiyang Xing, Ningbo (CN); Dian Ma, Ningbo (CN); Wei Liu, Ningbo (CN); Baojie Yan, Ningbo (CN); and Mingdun Liao, Ningbo (CN)
Assigned to TERANERGY TECHNOLOGY CO., LTD., Ningbo (CN)
Filed by Teranergy Technology Co., Ltd., Ningbo (CN)
Filed on Sep. 13, 2024, as Appl. No. 18/884,233.
Application 18/884,233 is a continuation of application No. PCT/CN2022/113247, filed on Aug. 18, 2022.
Claims priority of application No. 202210368180.3 (CN), filed on Mar. 23, 2022.
Prior Publication US 2025/0006850 A1, Jan. 2, 2025
Int. Cl. H10F 77/30 (2025.01); C23C 8/12 (2006.01); C23C 16/24 (2006.01); C23C 16/30 (2006.01); C23C 16/50 (2006.01); C23C 16/56 (2006.01); H10F 71/00 (2025.01); H10F 77/1223 (2025.01); H10F 77/164 (2025.01)

CPC H10F 77/311 (2025.01) [C23C 8/12 (2013.01); C23C 16/24 (2013.01); C23C 16/308 (2013.01); C23C 16/50 (2013.01); C23C 16/56 (2013.01); H10F 71/1221 (2025.01); H10F 71/128 (2025.01); H10F 77/1223 (2025.01); H10F 77/1642 (2025.01)]

8 Claims

1. A preparation method of an ultrathin silicon oxynitride interface material,

wherein the ultrathin silicon oxynitride interface material is a single SiON film with a thickness of 1 nm to 4 nm, and a percentage content of N atoms in the single SiON film ranges from 1% to 40%;

wherein the preparation method comprises:

step S1, growing a layer of an SiO₂film on a silicon wafer by an ion-free bombardment oxidation method;

step S2, performing a surface nitriding treatment on the SiO₂film in a plasma enhanced chemical vapor deposition (PECVD) with a nitrogen-containing gas and an oxygen-containing gas filled treatment atmosphere to convert the SiO₂film to the single SiON film.