US 12,419,127 B2
Semiconductor device and method of manufacturing the same, and electronic apparatus
Taku Umebayashi, Kanagawa (JP); Hiroshi Takahashi, Kanagawa (JP); and Reijiroh Shohji, Nagasaki (JP)
Assigned to Sony Group Corporation, Tokyo (JP)
Filed by SONY GROUP CORPORATION, Tokyo (JP)
Filed on Mar. 25, 2024, as Appl. No. 18/615,151.
Application 18/615,151 is a continuation of application No. 18/321,439, filed on May 22, 2023, granted, now 12,166,061.
Application 18/321,439 is a continuation of application No. 17/110,145, filed on Dec. 2, 2020, granted, now 11,764,243, issued on Sep. 19, 2023.
Application 17/110,145 is a continuation of application No. 16/913,075, filed on Jun. 26, 2020, granted, now 10,950,647, issued on Mar. 16, 2021.
Application 16/913,075 is a continuation of application No. 16/358,348, filed on Mar. 19, 2019, granted, now 10,916,577, issued on Feb. 9, 2021.
Application 16/358,348 is a continuation of application No. 15/814,177, filed on Nov. 15, 2017, granted, now 10,403,670, issued on Sep. 3, 2019.
Application 15/814,177 is a continuation of application No. 15/713,226, filed on Sep. 22, 2017, granted, now 10,141,361, issued on Nov. 27, 2018.
Application 15/713,226 is a continuation of application No. 15/374,864, filed on Dec. 9, 2016, granted, now 9,799,695, issued on Oct. 24, 2017.
Application 15/374,864 is a continuation of application No. 15/087,695, filed on Mar. 31, 2016, granted, now 9,530,812, issued on Dec. 27, 2016.
Application 15/087,695 is a continuation of application No. 14/834,010, filed on Aug. 24, 2015, granted, now 9,319,569, issued on Apr. 19, 2016.
Application 14/834,010 is a continuation of application No. 12/722,069, filed on Mar. 11, 2010, granted, now 9,451,131, issued on Sep. 20, 2016.
Claims priority of application No. 2009-068582 (JP), filed on Mar. 19, 2009; and application No. 2010-012586 (JP), filed on Jan. 22, 2010.
Prior Publication US 2024/0234468 A1, Jul. 11, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 27/146 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01); H04N 23/00 (2023.01); H04N 25/76 (2023.01); H04N 25/79 (2023.01); H10F 39/00 (2025.01); H10F 39/12 (2025.01); H10F 39/18 (2025.01)
CPC H10F 39/809 (2025.01) [H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H04N 23/00 (2023.01); H04N 25/76 (2023.01); H04N 25/79 (2023.01); H10F 39/018 (2025.01); H10F 39/026 (2025.01); H10F 39/18 (2025.01); H10F 39/182 (2025.01); H10F 39/199 (2025.01); H10F 39/8037 (2025.01); H10F 39/8053 (2025.01); H10F 39/8063 (2025.01); H10F 39/811 (2025.01); H01L 2224/11 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An image sensor, comprising:
a first semiconductor section including a first semiconductor substrate and a first wiring layer, the first semiconductor substrate including a photodiode, and the first wiring layer including a first insulating interlayer and first and second wirings; and
a second semiconductor section including a second semiconductor substrate and a second wiring layer, the second semiconductor section including a transistor, and the second wiring layer including a second insulating interlayer and third and fourth wirings,
wherein the first semiconductor section and the second semiconductor section are bonded together such that the first wiring layer and the third wiring layer face each other,
wherein the first wiring of the first wiring layer directly contacts the third wiring of the second wiring layer in a pixel region including the photodiode, and
wherein the second wiring of the first wiring layer directly contacts the fourth wiring of the second wiring layer in a peripheral region other than the pixel region.