US 12,419,104 B2
Semiconductor device and method of forming the same
Yi-Ren Chen, Taoyuan (TW); Chung-Ting Li, Hsinchu (TW); and Shih-Hsun Chang, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jan. 11, 2023, as Appl. No. 18/152,775.
Claims priority of provisional application 63/405,888, filed on Sep. 13, 2022.
Prior Publication US 2024/0088148 A1, Mar. 14, 2024
Int. Cl. H10D 84/85 (2025.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01)
CPC H10D 84/85 (2025.01) [H10D 30/014 (2025.01); H10D 30/43 (2025.01); H10D 30/6735 (2025.01); H10D 62/121 (2025.01); H10D 64/017 (2025.01); H10D 84/0167 (2025.01); H10D 84/038 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate comprising a nanosheet mesa
a stack of semiconductor nanosheets disposed on the nanosheet mesa;
a dielectric wall crossing through the nanosheet mesa and the stack of semiconductor nanosheets; and
a gate structure wrapping the stack of semiconductor nanosheets and crossing over the dielectric wall,
wherein a top of the dielectric wall has a recess.