US 12,419,082 B2
Field effect transistor device
Mingxiang Wang, Suzhou (CN); Lekai Chen, Suzhou (CN); Dongli Zhang, Suzhou (CN); and Huaisheng Wang, Suzhou (CN)
Assigned to Soochow University, Suzhou (CN)
Appl. No. 17/997,556
Filed by Soochow University, Suzhou (CN)
PCT Filed Dec. 1, 2021, PCT No. PCT/CN2021/134781
§ 371(c)(1), (2) Date Oct. 31, 2022,
PCT Pub. No. WO2023/029258, PCT Pub. Date Mar. 9, 2023.
Claims priority of application No. 202111039996.3 (CN), filed on Sep. 6, 2021.
Prior Publication US 2024/0304729 A1, Sep. 12, 2024
Int. Cl. H10D 30/67 (2025.01); H10D 30/43 (2025.01); H10D 30/47 (2025.01); H10D 62/10 (2025.01)
CPC H10D 30/6757 (2025.01) [H10D 30/43 (2025.01); H10D 30/475 (2025.01); H10D 30/6729 (2025.01); H10D 30/6735 (2025.01); H10D 62/121 (2025.01)] 13 Claims
OG exemplary drawing
 
1. A field effect transistor device, comprising:
an active layer including a source region, a drain region, and a channel region located between the source region and the drain region;
a gate provided around the channel region; and
a gate insulating layer provided between the gate and the channel region;
wherein an effective channel, as well as an equivalent source and/or equivalent drain spaced away from the effective channel are formed in the channel region upon turning on of the field effect transistor device,
when the effective channel and the equivalent source are formed in the channel region, the source region is connected with the drain region through the equivalent source and the effective channel, so as to form an operating current;
when the effective channel and the equivalent drain are formed in the channel region, the source region is connected with the drain region through the effective channel and the equivalent drain, so as to form an operating current; and
when the effective channel, the equivalent source and the equivalent drain are formed in the channel region, the source region is connected with the drain region through the equivalent source, effective channel and the effective drain, so as to form an operating current;
wherein a conductive region that does not connect the source region and the drain region is formed in the channel region;
when the conductive region is in connection with the source region, the conductive region constitutes the equivalent source; and when the conductive region is in connection with the drain region, the conductive region constitutes the equivalent drain;
wherein perpendicular projections of the gate and the conductive region on a reference plane overlap, the gate is capable of controlling the channel region and form a channel therein, and portions of perpendicular projections of the gate and the conductive region on the reference plane that are not overlapping each other constitute the effective channel, wherein the reference plane is a plane passing through a central axis along a length direction of the channel region; and
wherein when the device is turned on, a conductance of the conductive region is greater than that of the rest portion of the channel other than the effective channel so that at least one of the conductive region and the effective channel can inject carriers into the other.