US 12,419,078 B2
Light emitting display device and method of manufacturing the same
Kee Joon Choi, Daejeon (KR)
Assigned to SILICON WORKS CO., LTD., Daejeon (KR)
Filed by SILICON WORKS CO., LTD., Daejeon (KR)
Filed on Jun. 30, 2021, as Appl. No. 17/363,994.
Claims priority of application No. 10-2020-0082810 (KR), filed on Jul. 6, 2020.
Prior Publication US 2022/0005897 A1, Jan. 6, 2022
Int. Cl. H01L 27/32 (2006.01); H10D 30/67 (2025.01); H10K 50/856 (2023.01); H10K 59/122 (2023.01); H10K 59/127 (2023.01); H10K 59/80 (2023.01); H10K 71/00 (2023.01); H10K 59/12 (2023.01); H10K 59/131 (2023.01)
CPC H10D 30/6704 (2025.01) [H10K 50/856 (2023.02); H10K 59/122 (2023.02); H10K 59/1275 (2023.02); H10K 59/878 (2023.02); H10K 71/00 (2023.02); H10K 59/1201 (2023.02); H10K 59/131 (2023.02)] 16 Claims
OG exemplary drawing
 
1. A light-emitting display device comprising:
a first substrate and a second substrate;
a first circuit layer provided on one surface of the first substrate;
a second circuit layer provided on one surface of the second substrate facing the first substrate;
a first pad layer provided on one surface of the first circuit layer;
a second pad layer provided on one surface of the second circuit layer and electrically connected to the first pad layer; and
a light-emitting element layer provided on another surface of the second substrate that is not provided with the second circuit layer and does not face the first substrate, wherein
at least one of a gate driving circuit, a data driving circuit, and a power supply circuit is provided in the first circuit layer,
at least one of a gate line, a data line, a power supply line, a part of a thin film transistor, and a capacitor is provided in the second circuit layer,
the part of the thin film transistor provided in the second circuit layer is disposed between the light-emitting element layer and the second pad layer, and
a distance between a drain electrode of the thin film transistor and the light-emitting element layer is smaller than a distance between a gate electrode of the thin film transistor and the light-emitting element layer,
wherein a first electrode of a light-emitting element is provided for each pixel inside the second substrate, and a light-emitting layer and a second electrode of the light-emitting element are provided in the light-emitting element layer,
wherein the first electrode includes a base layer made of a first semiconductor material, a first doping layer provided on one surface of the base layer, and a second doping layer provided on the other surface of the base layer,
wherein adjacent two first electrodes are spaced apart by a trench provided inside the second substrate therebetween, and
wherein the drain electrode includes a second semiconductor material having a polarity different from the first semiconductor material of the base layer of the first electrode.