US 12,419,077 B2
Method for forming dual silicide in manufacturing process of semiconductor structure
Ying-Chi Su, Hsinchu (TW); Li-Wei Chu, Hsinchu (TW); Hung-Hsu Chen, Hsinchu (TW); Chih-Wei Chang, Hsinchu (TW); and Ming-Hsing Tsai, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jun. 23, 2022, as Appl. No. 17/847,787.
Prior Publication US 2023/0420565 A1, Dec. 28, 2023
Int. Cl. H10D 30/62 (2025.01); H10D 30/01 (2025.01); H10D 62/83 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01)
CPC H10D 30/6211 (2025.01) [H10D 30/024 (2025.01); H10D 62/83 (2025.01); H10D 84/0158 (2025.01); H10D 84/038 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A method for manufacturing a semiconductor structure, comprising:
forming a patterned structure which includes a first semiconductor portion and a second semiconductor portion, the first semiconductor portion and the second semiconductor portion having different materials;
performing an oxide formation process to oxidize the first semiconductor portion and the second semiconductor portion such that a first oxidation layer formed on the first semiconductor portion has a thickness less than a thickness of a second oxidation layer formed on the second semiconductor portion;
after the oxide formation process, performing a removal process so that the first oxidation layer is removed to expose the first semiconductor portion, and the second oxidation layer remains covering the second semiconductor portion;
after the removal process, forming a first silicide portion on the first semiconductor portion;
after forming the first silicide portion, removing the second oxidation layer to expose the second semiconductor portion; and
after removing the second oxidation layer, forming a second silicide portion on the second semiconductor portion.