US 12,419,074 B2
Barrier structure configured to increase performance of III-V devices
Yun-Hsiang Wang, Hsin-Chu (TW); Chun Lin Tsai, Hsin-Chu (TW); Jiun-Lei Jerry Yu, Zhudong Township (TW); Po-Chih Chen, Hsinchu (TW); Chia-Ling Yeh, Jhubei (TW); and Ching Yu Chen, Zhubei (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (TW)
Filed on Aug. 5, 2022, as Appl. No. 17/881,984.
Application 17/881,984 is a division of application No. 16/872,551, filed on May 12, 2020, granted, now 11,715,792.
Claims priority of provisional application 62/968,212, filed on Jan. 31, 2020.
Prior Publication US 2022/0376086 A1, Nov. 24, 2022
Int. Cl. H10D 30/47 (2025.01); H10D 30/01 (2025.01); H10D 62/824 (2025.01); H10D 62/85 (2025.01)
CPC H10D 30/475 (2025.01) [H10D 30/015 (2025.01); H10D 30/4755 (2025.01); H10D 62/824 (2025.01); H10D 62/8503 (2025.01)] 20 Claims
OG exemplary drawing
 
1. An integrated chip, comprising:
an undoped layer overlying a substrate;
a first barrier layer overlying the undoped layer;
a doped layer overlying the first barrier layer; and
a second barrier layer overlying the first barrier layer, wherein the second barrier layer is laterally offset from a perimeter of the doped layer by a non-zero distance, wherein the first and second barrier layers comprise a same III-V semiconductor material, wherein a first atomic percentage of a first element within the first barrier layer is less than a second atomic percentage of the first element within the second barrier layer, wherein the first barrier layer comprises a first segment having a first thickness below the doped layer and a second segment having a second thickness directly adjacent to the first segment, wherein the second barrier layer has a third thickness, wherein the first thickness is greater than the second thickness and the third thickness, wherein the first segment has a top surface contacting a bottom surface of the doped layer and the second segment has a top surface contacting a bottom surface of the second barrier layer, wherein a bottom surface of the first segment is aligned with a bottom surface of the second segment, wherein the first segment contacts an inner sidewall of the second barrier layer.