	US 12,419,071 B2
	High electron mobility transistor and method for fabricating the same
Chih-Tung Yeh, Taoyuan (TW); and Wen-Jung Liao, Hsinchu (TW)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed on Aug. 26, 2022, as Appl. No. 17/896,106.
Claims priority of application No. 111128124 (TW), filed on Jul. 27, 2022.
Prior Publication US 2024/0038871 A1, Feb. 1, 2024
Int. Cl. H10D 30/01 (2025.01); H01L 21/02 (2006.01); H01L 21/225 (2006.01); H10D 30/47 (2025.01); H10D 62/85 (2025.01)

CPC H10D 30/015 (2025.01) [H01L 21/02458 (2013.01); H01L 21/0254 (2013.01); H01L 21/2257 (2013.01); H10D 30/475 (2025.01); H10D 62/8503 (2025.01)]

8 Claims

1. A method for fabricating a high electron mobility transistor (HEMT), comprising:

forming a buffer layer on a substrate;

forming a barrier layer on the buffer layer;

forming a p-type semiconductor layer on the barrier layer;

patterning the p-type semiconductor layer;

forming a passivation layer on the p-type semiconductor layer;

patterning the passivation layer to expose the p-type semiconductor layer;

forming a silicon layer on the p-type semiconductor layer;

forming a gate electrode on the silicon layer;

performing an anneal process to transform the silicon layer into a hole injection buffer layer (HIBL); and

forming a source electrode and a drain electrode adjacent to two sides of the gate electrode.