US 12,418,001 B2
3D integrated circuit (3DIC) structure
Chen-Hua Yu, Hsinchu (TW); Wen-Chih Chiou, Zhunan Township (TW); and Chung-Shi Liu, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Mar. 27, 2023, as Appl. No. 18/190,341.
Application 17/649,381 is a division of application No. 16/435,697, filed on Jun. 10, 2019, granted, now 11,239,201, issued on Feb. 1, 2022.
Application 16/435,697 is a division of application No. 14/591,784, filed on Jan. 7, 2015, granted, now 10,319,701, issued on Jun. 11, 2019.
Application 18/190,341 is a continuation of application No. 17/649,381, filed on Jan. 31, 2022.
Prior Publication US 2023/0230962 A1, Jul. 20, 2023
Int. Cl. H01L 25/065 (2023.01); H01L 23/00 (2006.01); H01L 25/00 (2006.01)
CPC H01L 25/0657 (2013.01) [H01L 24/05 (2013.01); H01L 24/16 (2013.01); H01L 24/81 (2013.01); H01L 25/50 (2013.01); H01L 24/13 (2013.01); H01L 2224/05558 (2013.01); H01L 2224/05571 (2013.01); H01L 2224/11462 (2013.01); H01L 2224/11464 (2013.01); H01L 2224/1147 (2013.01); H01L 2224/13101 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/1607 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/81007 (2013.01); H01L 2224/81141 (2013.01); H01L 2224/81801 (2013.01); H01L 2224/81815 (2013.01); H01L 2224/81947 (2013.01); H01L 2224/81948 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06541 (2013.01); H01L 2924/14 (2013.01); H01L 2924/381 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for forming a semiconductor device, the method comprising:
forming, in a first semiconductor structure, a first bonding layer comprising a first dielectric layer and a plurality of protruding contact structures;
forming, in a second semiconductor structure, a second bonding layer comprising a second dielectric layer and a plurality of recess contact structures, wherein each of the plurality of recess contact structures comprises a metal feature, a surface of the metal feature of each of the plurality of recess contact structures having a first recess; and
after forming the first bonding layer and after forming the second bonding layer, bonding the plurality of protruding contact structures with the plurality of recess contact structures such that each of the plurality of protruding contact structures is in contact with the first recess of the surface of a respective recess contact structure.