US 12,417,969 B2
Semiconductor structure and circuit structure
Kuan-Lin Ho, Hsinchu (TW); Chin-Liang Chen, Kaohsiung (TW); Pei-Rong Ni, Hsinchu (TW); Chia-Min Lin, Hsinchu (TW); Yu-Min Liang, Taoyuan (TW); and Jiun-Yi Wu, Taoyuan (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jan. 31, 2023, as Appl. No. 18/162,620.
Application 18/162,620 is a division of application No. 17/351,253, filed on Jun. 18, 2021, granted, now 11,594,479.
Prior Publication US 2023/0178466 A1, Jun. 8, 2023
Int. Cl. H01L 23/498 (2006.01); H01L 21/48 (2006.01)
CPC H01L 23/49833 (2013.01) [H01L 21/4857 (2013.01); H01L 23/49816 (2013.01); H01L 23/49822 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising: a redistribution structure comprising a bottom surface, a top surface opposite to the bottom surface, and a sidewall located between the top surface and the bottom surface, wherein gas release trenches are extending along the top surface of the redistribution structure and extend to the sidewall of the redistribution structure; conductive joints disposed on the bottom surface of the redistribution structure; conductive terminals disposed over the top surface of the redistribution structure; a circuit substrate electrically coupled to the redistribution structure through the conductive joints; and an insulating encapsulation disposed on the bottom surface of the redistribution structure to cover the circuit substrate.