US 12,417,966 B2
IPD components having SiC substrates and devices and processes implementing the same
Donald Farrell, Raleigh, NC (US); Marvin Marbell, Cary, NC (US); Jeremy Fisher, Raleigh, NC (US); Dan Namishia, Wake Forest, NC (US); Scott Sheppard, Chapel Hill, NC (US); and Dan Etter, Durham, NC (US)
Assigned to MACOM Technology Solutions Holdings, Inc., Lowell, MA (US)
Filed by WOLFSPEED, INC., Durham, NC (US)
Filed on Dec. 17, 2021, as Appl. No. 17/555,106.
Prior Publication US 2023/0197587 A1, Jun. 22, 2023
Int. Cl. H01L 23/495 (2006.01); H01L 23/00 (2006.01); H01L 23/64 (2006.01); H10D 30/47 (2025.01); H10D 30/65 (2025.01); H10D 62/832 (2025.01); H10D 62/85 (2025.01); H10D 84/83 (2025.01)
CPC H01L 23/49589 (2013.01) [H01L 23/49575 (2013.01); H01L 23/645 (2013.01); H01L 23/647 (2013.01); H01L 24/85 (2013.01); H01L 24/48 (2013.01); H01L 2224/48245 (2013.01); H10D 30/47 (2025.01); H10D 30/65 (2025.01); H10D 62/8325 (2025.01); H10D 62/8503 (2025.01); H10D 84/83 (2025.01)] 34 Claims
OG exemplary drawing
 
1. A transistor device, comprising:
a metal submount;
a transistor die arranged on said metal submount;
at least one integrated passive device (IPD) component comprising a substrate arranged on said metal submount; and
one or more interconnects extending between the transistor die and the at least one integrated passive device (IPD) component,
wherein the substrate of the at least one integrated passive device (IPD) component comprises a silicon carbide (SiC) substrate.