US 12,417,908 B2
Semiconductor device and method for manufacturing semiconductor device
Koji Tanaka, Tokyo (JP); Yuji Sato, Tokyo (JP); Yoshihisa Uchida, Tokyo (JP); and Shotaro Nakamura, Tokyo (JP)
Assigned to Mitsubishi Electric Corporation, Tokyo (JP)
Filed by Mitsubishi Electric Corporation, Tokyo (JP)
Filed on Jun. 13, 2022, as Appl. No. 17/839,048.
Claims priority of application No. 2021-168314 (JP), filed on Oct. 13, 2021.
Prior Publication US 2023/0122575 A1, Apr. 20, 2023
Int. Cl. H01L 21/02 (2006.01)
CPC H01L 21/02175 (2013.01) [H01L 21/02142 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a semiconductor substrate;
a first metal layer provided above the semiconductor substrate;
a second metal layer provided above the first metal layer and containing Ni as a material; and
a third metal layer provided above the second metal layer and containing Cu or Ni as a material, wherein
the second metal layer has a Vickers hardness of 400 Hv or more and is harder than the third metal layer,
the third metal layer is harder than the first metal layer, and
the second metal layer directly contacts the first metal layer.