US 12,417,897 B2
Plasma processing apparatus and plasma processing method using the same
Yoon Seok Choi, Gyeonggi-do (KR); Soon Cheon Cho, Gyeonggi-do (KR); Sang Jeong Lee, Gyeonggi-do (KR); Hyun Woo Jo, Gyeonggi-do (KR); and Jong Won Park, Gyeonggi-do (KR)
Assigned to SEMES CO., LTD., Chungcheongnam-do (KR)
Filed by SEMES CO., LTD., Chungcheongnam-do (KR)
Filed on May 14, 2022, as Appl. No. 17/744,624.
Claims priority of application No. 10-2021-0139978 (KR), filed on Oct. 20, 2021.
Prior Publication US 2023/0124857 A1, Apr. 20, 2023
Int. Cl. H01J 37/32 (2006.01)
CPC H01J 37/3211 (2013.01) [H01J 2237/334 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A plasma processing apparatus comprising:
a chamber having a processing space defined therein in which plasma is generated; and
a plasma generation unit configured to excite gas in the processing space into a plasma state,
wherein the plasma generation unit includes:
a first power supply to supply power for generation of the plasma;
a coil connected to the first power supply;
a first shunt capacitor connected between a first node of the coil and a ground; and
a second shunt capacitor connected between a second node other than the first node of the coil and the ground,
wherein:
the coil comprises a first partial coil and a second partial coil connected in series to each other,
one end of the first partial coil is connected to the first power supply and another end of the first partial coil is connected to the first node of the coil connected to the first shunt capacitor, and
one end of the second partial coil is connected to the first node of the coil connected to the first shunt capacitor and another end of the second partial coil is connected to the second node of the coil connected to the second shunt capacitor.