| CPC G11C 11/54 (2013.01) [G06N 3/065 (2023.01); G11C 13/0007 (2013.01)] | 15 Claims |

|
1. A semiconductor device comprising:
variable resistance elements on a semiconductor substrate, wherein
each of the variable resistance elements includes a first electrode, a second electrode, and a variable resistance layer that is sandwiched between the first electrode and the second electrode and that stores a resistance value that is continuously variable,
the variable resistance layer includes a filament whose shape differs according to a neural network weight, and stores, as an analog value, the resistance value that is variable, and
an area of the filament in a plan view of the semiconductor substrate differs according to the neural network weight.
|