US 12,416,870 B2
Measuring method and measuring apparatus
Johan Reinink, Uden (NL); Jeroen Cottaar, Eindhoven (NL); Sjoerd Nicolaas Lambertus Donders, Vught (NL); and Sietse Thijmen Van Der Post, Utrecht (NL)
Assigned to ASML Netherlands B.V., Veldhoven (NL)
Appl. No. 17/774,743
Filed by ASML Netherlands B.V., Veldhoven (NL)
PCT Filed Oct. 20, 2020, PCT No. PCT/EP2020/079514
§ 371(c)(1), (2) Date May 5, 2022,
PCT Pub. No. WO2021/089319, PCT Pub. Date May 14, 2021.
Claims priority of application No. 19207109 (EP), filed on Nov. 5, 2019; and application No. 20157939 (EP), filed on Feb. 18, 2020.
Prior Publication US 2022/0397834 A1, Dec. 15, 2022
Int. Cl. G03F 7/00 (2006.01); G03F 9/00 (2006.01)
CPC G03F 9/7088 (2013.01) [G03F 7/70625 (2013.01); G03F 7/70633 (2013.01); G03F 7/706845 (2023.05); G03F 7/706851 (2023.05)] 15 Claims
OG exemplary drawing
 
1. An apparatus comprising:
a reflecting element configured to receive a reflected radiation resulting from reflection of source radiation from a substrate and to further reflect the reflected radiation into a further reflected radiation;
a first detector configured to perform a first alignment measurement of the further reflected radiation;
a diffraction element configured to diffract the reflected radiation or the further reflected radiation into a diffracted radiation; and
a second detector configured to perform a measurement of the diffracted radiation to determine one or more parameters of a structure on the substrate,
wherein an alignment between the source radiation and the substrate and one or more parameters of the substrate are measured substantially simultaneously,
wherein the reflecting element or the second detector is further configured to perform a second alignment measurement, and
wherein the first alignment measurement and the second alignment measurement are configured to determine a position of the substrate within the apparatus and to determine an alignment between a lithographically patterned or exposed structure on the substrate and the source radiation in at least a first degree of freedom and a second degree of freedom.