| CPC G03F 7/70633 (2013.01) [H01L 23/544 (2013.01); H01L 2223/54426 (2013.01)] | 9 Claims |

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1. An overlay method, used to determine an overlay error of a device structure formed in a semiconductor manufacturing process, comprising:
forming a first overlay target, comprising:
providing a plurality of working zones;
forming a plurality of holes in a first sub-zone of each of the working zones; and
forming a first layer in the holes, wherein the holes are not filled up by the first layer, and a plurality of spaces are reserved, the spaces have a plurality of first diameters and a plurality of second diameters greater than the first diameters;
taking a plurality of midpoints of the second diameters of the spaces as a plurality of calibration center points;
forming a second overlay target, comprising forming a plurality of line segments in a second sub-zone of each of the working zones; and
determining the overlay error of the device structure by using the calibration center points and a plurality of centers of the line segments.
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