US 12,416,710 B1
Manufacturing process for LIDAR system with individualized semiconductor optical amplifier dies
James Ferrara, Oakland, CA (US); Pruthvi Jujjavarapu, Palo Alto, CA (US); Sen Lin, Mountain View, CA (US); Andrew Steil Michaels, Los Altos, CA (US); Gevorg Martuni Nahapetian, Pleasanton, CA (US); Parth Panchal, San Jose, CA (US); and Imbert Yuyen Wang, Santa Clara, CA (US)
Assigned to AURORA OPERATIONS, INC., Pittsburgh, PA (US)
Filed by Aurora Operations, Inc., Pittsburgh, PA (US)
Filed on Aug. 21, 2024, as Appl. No. 18/811,327.
Int. Cl. G01S 7/481 (2006.01); H01S 5/02 (2006.01); H01S 5/02253 (2021.01); H01S 5/02375 (2021.01); H01S 5/024 (2006.01); H01S 5/20 (2006.01); H01S 5/343 (2006.01)
CPC G01S 7/4815 (2013.01) [H01S 5/0201 (2013.01); H01S 5/02253 (2021.01); H01S 5/02375 (2021.01); H01S 5/02469 (2013.01); H01S 5/2018 (2013.01); H01S 5/343 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for manufacturing a semiconductor device for a LIDAR system for a vehicle, the method comprising:
(a) forming a plurality of semiconductor optical amplifier (SOA) regions on a semiconductor wafer;
(b) dicing the semiconductor wafer to produce a plurality of individualized SOA dies, the plurality of individualized SOA dies respectively comprising the plurality of SOA regions,
(c) aligning the plurality of individualized SOA dies with one or more array inputs, the one or more array inputs configured to provide a beam from a light source to the plurality of individualized SOA dies;
(d) aligning the plurality of individualized SOA dies with one or more array outputs, the one or more array outputs configured to provide the beam from the plurality of individual SOA dies to an emitter; and
(e) coupling the plurality of individualized SOA dies to a thermally conductive substrate.
 
10. A method for manufacturing a LIDAR system for a vehicle, the method comprising:
(a) forming a plurality of semiconductor optical amplifier (SOA) regions on a semiconductor wafer;
(b) dicing the semiconductor wafer to produce a plurality of individualized SOA dies, the plurality of individualized SOA dies respectively comprising the plurality of SOA regions;
(c) aligning the plurality of individualized SOA dies with one or more array inputs;
(d) aligning the plurality of individualized SOA dies with one or more array outputs;
(e) coupling a light source to the one or more array inputs;
(f) coupling one or more coherent pixels to the one or more array outputs; and
(g) forming one or more butt couplings between at least one of the one or more array inputs or the one or more array outputs and the plurality of individualized SOA dies, the one or more butt couplings comprising a direct coupling between a surface of the plurality of individualized SOA dies and the at least one of the one or more array inputs or the one or more array outputs.
 
13. A method for manufacturing a semiconductor device for a LIDAR system for a vehicle, the method comprising:
(a) forming a plurality of semiconductor optical amplifier (SOA) regions on a semiconductor wafer;
(b) dicing the semiconductor wafer to produce a plurality of individualized SOA dies, the plurality of individualized SOA dies respectively comprising the plurality of SOA regions;
(c) aligning the plurality of individualized SOA dies with one or more array inputs, the one or more array inputs configured to provide a beam from a light source to the plurality of individualized SOA dies;
(d) aligning the plurality of individualized SOA dies with one or more array outputs, the one or more array outputs configured to provide the beam from the plurality of individual SOA dies to an emitter; and
(e) providing one or more microlenses at one or both of the one or more array inputs and the one or more array outputs, the one or more microlenses configured to focus the beam passing through the plurality of individualized SOA dies.