| CPC C30B 33/04 (2013.01) [B23K 26/40 (2013.01); B23K 26/53 (2015.10); C04B 41/0036 (2013.01); C04B 41/009 (2013.01); C04B 41/91 (2013.01); C30B 29/04 (2013.01); C30B 33/08 (2013.01)] | 3 Claims |

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1. A method of manufacturing a diamond substrate comprising:
a step of placing a laser condensing unit configured to condense laser light so as to face an upper surface of a block of single crystal diamond;
a step of forming a modified layer, which includes a processing mark of graphite and a crack extending along a surface (111) around the processing mark, in a partial region of the upper surface of the block along the surface (111) of the single crystal diamond, at a predetermined depth from the upper surface of the block by radiating the laser light on the upper surface of the block from the laser condensing unit and condensing the laser light inside the block, and moving the laser condensing unit and the block in a relative manner two-dimensionally,
wherein the step of forming the modified layer includes:
a step of moving the laser condensing unit and the block in a relative manner in a predetermined scanning direction; and
a step of moving the laser condensing unit and the block in a relative manner in a direction orthogonal to the scanning direction at a predetermined interval, wherein the laser condensing unit moves in a relative manner two-dimensionally by a predetermined line pitch in the direction orthogonal to the scanning direction;
a step of forming a cleavage plane at the predetermined depth of a remaining region of the upper surface of the block by spontaneously propagating cleavage from the modified layer; and
a step of causing the block to spontaneously delaminate into a portion up to a depth from the upper surface to the modified layer or the cleavage plane, and a portion deeper than the modified layer or the cleavage plane,
wherein the block has a planar surface as an upper surface as the (111) surface of the single crystal diamond.
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