US 12,416,096 B2
Methods and devices for growing oxide crystals in oxygen atmosphere
Yu Wang, Meishan (CN); Weiming Guan, Meishan (CN); and Min Li, Meishan (CN)
Assigned to MEISHAN BOYA ADVANCED MATERIALS CO., LTD., Meishan (CN)
Filed by MEISHAN BOYA ADVANCED MATERIALS CO., LTD., Sichuan (CN)
Filed on Oct. 25, 2023, as Appl. No. 18/494,746.
Application 18/494,746 is a division of application No. 17/187,637, filed on Feb. 26, 2021, granted, now 11,828,001.
Application 17/187,637 is a division of application No. 16/903,334, filed on Jun. 16, 2020, granted, now 11,319,645, issued on May 3, 2022.
Application 16/903,334 is a continuation of application No. PCT/CN2019/101693, filed on Aug. 21, 2019.
Prior Publication US 2024/0052523 A1, Feb. 15, 2024
Int. Cl. C30B 29/22 (2006.01); C01B 33/20 (2006.01); C30B 15/02 (2006.01); C01F 17/00 (2020.01)
CPC C30B 29/22 (2013.01) [C01B 33/20 (2013.01); C30B 15/02 (2013.01); C01F 17/00 (2013.01); C01P 2002/52 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A crystal, a formula of the crystal being (A1-bBb)3(P1-qQq)5O12, wherein:
A consists of at least one of Gd, Lu, La, Yb, Sc, or Y;
B consists of at least one of Na, K, V, Mn, Fe, Co, Ni, Ti, Ge, Zr, or Hf;
P consists of at least one of Al, Ga, In, or Sc;
Q consists of Al;
b=0.2˜0.9; and
q=0˜1.