US 12,416,095 B2
Ingot growth apparatus
Young Min Lee, Seoul (KR); Kyung Seok Lee, Seoul (KR); Jin Sung Park, Seoul (KR); and Dong Woo Bae, Seoul (KR)
Assigned to HANWHA SOLUTIONS CORPORATION, Seoul (KR); and HANWHA CORPORATION, Seoul (KR)
Appl. No. 18/028,609
Filed by HANWHA SOLUTIONS CORPORATION, Seoul (KR); and HANWHA CORPORATION, Seoul (KR)
PCT Filed Sep. 3, 2021, PCT No. PCT/KR2021/011953
§ 371(c)(1), (2) Date Mar. 27, 2023,
PCT Pub. No. WO2022/065740, PCT Pub. Date Mar. 31, 2022.
Claims priority of application No. 10-2020-0126319 (KR), filed on Sep. 28, 2020.
Prior Publication US 2024/0076798 A1, Mar. 7, 2024
Int. Cl. C30B 15/18 (2006.01); C30B 29/06 (2006.01)
CPC C30B 15/18 (2013.01) [C30B 29/06 (2013.01)] 11 Claims
OG exemplary drawing
 
1. An apparatus for growing an ingot, comprising:
a growth furnace having a main crucible which is disposed inside the growth furnace and in which molten silicon is held in order to grow the ingot;
a susceptor which is formed to surround an outer surface of the main crucible and heats the main crucible;
a heater which is formed to surround the outer surface of the susceptor and includes a coil which is supplied with power to generate a magnetic field and heats the susceptor by electromagnetic induction from the magnetic field; and
a heat insulation member which is disposed between the coil and the susceptor;
wherein the heat insulation member includes at least one cut-out area formed such that one side surface of the heat insulating member in a transverse direction, which is a circumferential direction of the heat insulation member when viewed from above, and the other side surface of the heat insulating member in the transverse direction of the heat insulation member are spaced apart from each other in the transverse direction; and
wherein a non-magnetic material is positioned between the one side surface of the heat insulating member and the other side surface of the heat insulation member to electrically insulate the two side surfaces from each other.