US 12,416,079 B2
Method and apparatus for filling gap using atomic layer deposition
Eunhyoung Cho, Suwon-si (KR); Sunghee Lee, Suwon-si (KR); Jeongyub Lee, Yongin-si (KR); and Han-Bo-Ram Lee, Seoul (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-Do (KR); and INCHEON NATIONAL UNIVERSITY RESEARCH & BUSINESS FOUNDATION, Incheon (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR); and INCHEON NATIONAL UNIVERSITY RESEARCH & BUSINESS FOUNDATION, Incheon (KR)
Filed on May 10, 2022, as Appl. No. 17/740,838.
Claims priority of application No. 10-2021-0119859 (KR), filed on Sep. 8, 2021; and application No. 10-2021-0138735 (KR), filed on Oct. 18, 2021.
Prior Publication US 2023/0070312 A1, Mar. 9, 2023
Int. Cl. C23C 16/455 (2006.01); C23C 16/40 (2006.01); H01L 21/02 (2006.01)
CPC C23C 16/45525 (2013.01) [C23C 16/401 (2013.01); H01L 21/02164 (2013.01); H01L 21/0228 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A method of filling a gap formed on a substrate, the method comprising:
forming a first reaction inhibition layer on a side wall of the gap;
forming a first precursor layer by adsorbing a first reactant into a bottom of the gap and into the side wall of the gap around the bottom of the gap; and
forming a first atomic layer on the bottom of the gap and the side wall of the gap around the bottom of the gap by adsorbing a second reactant into the first precursor layer,
wherein the forming of the first reaction inhibition layer comprises,
adsorbing a first reaction inhibitor into the side wall of the gap, and
forming a second reaction inhibitor by removing a specific ligand from the first reaction inhibitor,
wherein the first reaction inhibitor is adsorbed to have a density gradient in which a density of the first reaction inhibitor decreases toward the bottom of the gap, and
the second reaction inhibitor comprises a precursor material that does not react with the second reactant.