US 12,089,502 B2
Magnetoresistance effect element, storage element, and electronic device
Eiji Kariyada, Kanagawa (JP)
Assigned to Sony Semiconductor Solutions Corporation, Kanagawa (JP)
Appl. No. 17/419,414
Filed by Sony Semiconductor Solutions Corporation, Kanagawa (JP)
PCT Filed Jan. 8, 2020, PCT No. PCT/JP2020/000357
§ 371(c)(1), (2) Date Jun. 29, 2021,
PCT Pub. No. WO2020/158323, PCT Pub. Date Aug. 6, 2020.
Claims priority of application No. 2019-014595 (JP), filed on Jan. 30, 2019.
Prior Publication US 2022/0077387 A1, Mar. 10, 2022
Int. Cl. H01L 27/22 (2006.01); H10B 61/00 (2023.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01)
CPC H10N 50/10 (2023.02) [H10B 61/00 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02)] 14 Claims
OG exemplary drawing
 
1. A magnetoresistance effect element comprising: a first electrode;
a magnetization pinned layer that is provided on the first electrode and has a fixed magnetization direction;
a first insulating layer provided on the magnetization pinned layer;
a magnetization free layer that is provided on the first insulating layer and has a variable magnetization direction;
a second insulating layer provided on the magnetization free layer; and
a second electrode provided on the second insulating layer,
wherein
the magnetization pinned layer includes a first magnetic body provided on the first electrode, and a second magnetic body provided on the first magnetic body via a non-magnetic metal layer,
at least any of the first magnetic body and the second magnetic body is configured by providing a magnetic layer directly above a non-magnetic layer, and
the non-magnetic layer is formed in a multilayer structure in which different materials are alternately laminated.