US 12,089,454 B2
Double-sided display panel, method of manufacturing double-sided display panel, and electronic equipment
Weiran Cao, Guangdong (CN); and Libin Zhou, Guangdong (CN)
Assigned to Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd, Guangdong (CN)
Appl. No. 17/622,819
Filed by SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD, Guangdong (CN)
PCT Filed Dec. 20, 2021, PCT No. PCT/CN2021/139516
§ 371(c)(1), (2) Date Dec. 25, 2021,
PCT Pub. No. WO2023/108668, PCT Pub. Date Jun. 22, 2023.
Claims priority of application No. 202111521919.1 (CN), filed on Dec. 13, 2021.
Prior Publication US 2024/0032352 A1, Jan. 25, 2024
Int. Cl. H10K 59/12 (2023.01); H10K 59/121 (2023.01); H10K 59/126 (2023.01); H10K 59/127 (2023.01); H10K 59/50 (2023.01); H10K 59/80 (2023.01); H10K 77/10 (2023.01); H10K 102/00 (2023.01)
CPC H10K 59/1275 (2023.02) [H10K 59/1201 (2023.02); H10K 59/1213 (2023.02); H10K 59/126 (2023.02); H10K 59/50 (2023.02); H10K 59/8792 (2023.02); H10K 77/111 (2023.02); H10K 2102/3031 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A double-sided display panel, which comprises:
a light-emitting device layer comprising a plurality of light-emitting devices;
a thin film transistor (TFT) layer disposed on a side of the light-emitting device layer, wherein the TFT layer comprises a first TFT and a second TFT, and the first TFT is electrically connected to one of the light-emitting devices;
a first light-shielding conductive layer disposed on a side of the TFT layer away from the light-emitting device layer, and electrically connected to the second TFT;
an electrochromic layer disposed on a side of the first light-shielding conductive layer away from the TFT layer, and electrically connected to the first light-shielding conductive layer; and
a light-transmitting conductive layer disposed on a side of the electrochromic layer away from the first light-shielding conductive layer, and electrically connected to the electrochromic layer.