US 12,089,421 B2
Electronic device
Gwang Hyuk Shin, Icheon-si (KR)
Assigned to SK HYNIX INC., Icheon-si (KR)
Filed by SK hynix Inc., Icheon-si (KR)
Filed on Jan. 28, 2022, as Appl. No. 17/587,872.
Claims priority of application No. 10-2021-0103976 (KR), filed on Aug. 6, 2021.
Prior Publication US 2023/0043854 A1, Feb. 9, 2023
Int. Cl. H10B 63/00 (2023.01); H01L 29/40 (2006.01)
CPC H10B 63/80 (2023.02) [H01L 29/408 (2013.01); H10B 63/24 (2023.02)] 19 Claims
OG exemplary drawing
 
19. An electronic device comprising a semiconductor memory including at least one memory element, the memory element comprising:
a memory area for storing data; and
a selection element electrically connected to the memory area and including a first electrode layer, a second electrode layer, and a selection element layer that is interposed between the first electrode layer and the second electrode layer and includes an insulating material doped with a first dopant and a second dopant,
wherein the first and second dopants have work functions smaller than a work function of at least one of the first electrode layer and the second electrode layer, and
wherein the work function of the second dopant is greater than the work function of the first dopant.