US 12,089,418 B2
Magnetoresistive stack with seed region and method of manufacturing the same
Jijun Sun, Chandler, AZ (US); Sanjeev Aggarwal, Scottsdale, AZ (US); Han-Jong Chia, Hsinchu (TW); Jon M. Slaughter, Slingerlands, NY (US); and Renu Whig, Chandler, AZ (US)
Assigned to Everspin Technologies, Inc., Chandler, AZ (US)
Filed by Everspin Technologies, Inc., Chandler, AZ (US)
Filed on Mar. 17, 2023, as Appl. No. 18/185,725.
Application 18/185,725 is a continuation of application No. 17/131,926, filed on Dec. 23, 2020, granted, now 11,690,229.
Application 17/131,926 is a continuation of application No. 16/870,099, filed on May 8, 2020, granted, now 10,910,434, issued on Feb. 2, 2021.
Application 16/870,099 is a continuation of application No. 16/601,848, filed on Oct. 15, 2019, granted, now 10,692,926, issued on Jun. 23, 2020.
Application 16/601,848 is a continuation of application No. 16/195,178, filed on Nov. 19, 2018, granted, now 10,483,320, issued on Nov. 19, 2019.
Application 16/195,178 is a continuation in part of application No. 15/373,880, filed on Dec. 9, 2016, granted, now 10,141,498, issued on Nov. 27, 2018.
Claims priority of provisional application 62/712,578, filed on Jul. 31, 2018.
Claims priority of provisional application 62/265,650, filed on Dec. 10, 2015.
Prior Publication US 2023/0225135 A1, Jul. 13, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H10B 61/00 (2023.01); G11B 5/39 (2006.01); G11C 11/16 (2006.01); H10N 50/01 (2023.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01)
CPC H10B 61/00 (2023.02) [G11B 5/3909 (2013.01); G11C 11/1673 (2013.01); H10N 50/01 (2023.02); H10N 50/10 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A magnetoresistive stack comprising:
an electrically conductive material;
a seed region disposed above the electrically conductive material, wherein the seed region includes tantalum and chromium, and wherein the proportion of chromium is large enough to render the seed region substantially non-magnetic;
a fixed magnetic region disposed above the seed region, wherein the fixed magnetic region includes a synthetic antiferromagnetic structure comprising a first ferromagnetic region, a coupling layer, and a second ferromagnetic region, and wherein the first ferromagnetic region and the second ferromagnetic region comprise same materials;
a first dielectric layer disposed above at least a portion of the fixed magnetic region;
a free magnetic region disposed above the first dielectric layer;
a second dielectric layer disposed above the free magnetic region; and
a third magnetic region disposed above the second dielectric layer.