US 12,089,416 B2
Electronic device and method of manufacturing the same
Jinseong Heo, Seoul (KR); Yunseong Lee, Osan-si (KR); and Sanghyun Jo, Seoul (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jun. 12, 2023, as Appl. No. 18/332,972.
Application 18/332,972 is a continuation of application No. 17/496,299, filed on Oct. 7, 2021, granted, now 11,711,923.
Application 17/496,299 is a continuation of application No. 16/893,888, filed on Jun. 5, 2020, granted, now 11,177,283, issued on Nov. 16, 2021.
Application 16/893,888 is a continuation of application No. 16/244,243, filed on Jan. 10, 2019, granted, now 10,714,500, issued on Jul. 14, 2020.
Claims priority of application No. 10-2018-0096827 (KR), filed on Aug. 20, 2018.
Prior Publication US 2023/0328999 A1, Oct. 12, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/40 (2006.01); G11C 11/22 (2006.01); H01L 21/28 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H10B 51/30 (2023.01); G06N 3/065 (2023.01)
CPC H10B 51/30 (2023.02) [G11C 11/223 (2013.01); H01L 29/40111 (2019.08); H01L 29/6684 (2013.01); H01L 29/78391 (2014.09); G06N 3/065 (2023.01)] 20 Claims
OG exemplary drawing
 
1. An electronic device comprising:
a substrate;
a first stack on a first region of the substrate; and
a second stack on a second region of the substrate
wherein the first stack comprises
a first gate electrode apart from the substrate, and
a first layer comprising at least one of a Hf-based oxide, a Zr-based oxide, or combination thereof between the substrate and the first gate electrode, and
the second stack comprises
a second gate electrode apart from the substrate, and
a second layer comprising at least one of a Hf-based oxide, a Zr-based oxide, or combination thereof between the substrate and the second gate electrode,
wherein the first layer and the second layer have different material structures.