US 12,089,397 B2
Semiconductor devices and methods for fabricating thereof
Chang Mu An, Osan-si (KR); Sang Yeol Kang, Yongin-si (KR); Young-Lim Park, Anyang-si (KR); Jong-Bom Seo, Seoul (KR); and Se Hyoung Ahn, Seoul (KR)
Assigned to Samsung Electronics Co., Ltd., (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on May 17, 2023, as Appl. No. 18/318,752.
Application 18/318,752 is a division of application No. 17/570,477, filed on Jan. 7, 2022, granted, now 11,711,915.
Application 17/570,477 is a continuation of application No. 16/946,487, filed on Jun. 24, 2020, granted, now 11,244,946, issued on Feb. 8, 2022.
Claims priority of application No. 10-2019-0135307 (KR), filed on Oct. 29, 2019.
Prior Publication US 2023/0292496 A1, Sep. 14, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/76 (2006.01); H01L 29/94 (2006.01); H10B 12/00 (2023.01)
CPC H10B 12/37 (2023.02) 14 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a substrate;
a capacitor lower electrode on the substrate;
an insertion layer on the capacitor lower electrode;
a dielectric layer on the insertion layer; and
a capacitor upper electrode on the dielectric layer,
wherein the capacitor lower electrode includes titanium silicon nitride,
the insertion layer includes at least one of niobium oxide, or niobium nitride, and
the dielectric layer includes hafnium oxide.